Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By {\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x} O Based Gate Stack Engineering
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 2019
- DOI:
- 10.1109/TED.2019.2908960
- Bibcode:
- 2019ITED...66.2544D