High-Performance Vertical \beta -Ga2O3 Schottky Barrier Diode With Implanted Edge Termination
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- November 2019
- DOI:
- 10.1109/LED.2019.2939788
- Bibcode:
- 2019IEDL...40.1788Z