H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 2019
- DOI:
- 10.1109/LED.2019.2928026
- Bibcode:
- 2019IEDL...40.1350L