Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator Verona, C. ; Benetti, M. ; Cannata, D. ; Ciccognani, W. ; Colangeli, S. ; Di Pietrantonio, F. ; Limiti, E. ; Marinelli, M. ; Verona-Rinati, G. Abstract Publication: IEEE Electron Device Letters Pub Date: May 2019 DOI: 10.1109/LED.2019.2903578 Bibcode: 2019IEDL...40..765V