Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 2019
- DOI:
- 10.1109/LED.2019.2903641
- Bibcode:
- 2019IEDL...40..714X