Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO _{{x}} as Gate Dielectric
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- February 2019
- DOI:
- 10.1109/LED.2018.2888486
- Bibcode:
- 2019IEDL...40..295L