Effects of chemical pressure on diluted magnetic semiconductor (Ba,K)(Zn,Mn)2As2

Chemical pressure induced by iso-valent doping has been widely employed to tune physical properties of materials. In this work, we report effects of chemical pressure by substitution of Sb or P into As on a recently discovered diluted magnetic semiconductor (Ba,K)(Zn,Mn)₂As₂, which has the record of reliable Curie temperature of 230 K due to independent charge and spin doping. Sb and P are substituted into As-site to produce negative and positive chemical pressures, respectively. X-ray diffraction results demonstrate the successful chemical solution of dopants. Magnetic properties of both K-under-doped and K-optimal-doped samples are effectively tuned by Sb- and P-doping. The Hall effect measurements do not show decrease in carrier concentrations upon Sb- and P-doping. Impressively, magnetoresistance is significantly improved from 7% to 27% by only 10% P-doping, successfully extending potential application of (Ba,K)(Zn,Mn)₂As₂.