Properties of Bi2Se3 and BixSb(2 - x)Te3 grown by MBE
Abstract
We have studied molecular beam epitaxy growth of Bi2Se3 and BixSb(2-x)Te3. We have demonstrated that by using a two-step growth recipe, very flat films of both materials can be obtained. The film quality was confirmed using RHEED oscillations during growth and, post-growth XRD, AFM, and STEM. Under other growth and processing conditions, we have observed a more complicated film morphology in the growth of BixSb(2-x)Te3, which we attribute to compositional phase segregation. Using different substrates strongly impacts the film morphology. By tuning the ratio of Bi to Sb, the carrier type can be tuned from p-type to n-type measured via the Hall effect. The films were also studied by ARPES using a flip-chip cleaving approach in which the film plane at the interface to the substrate is measured after cleaving. The Hall and ARPES results agreed with regard to carrier type.
This work is supported by the National Science Foundation.- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2019
- Bibcode:
- 2019APS..MARX02010B