MBE grown AlN-TiN heterostructures for superconducting quantum circuits
Abstract
Superconducting transition metal nitrides are a family of superconductors that have been used to produce high internal quality factor superconducting coplanar waveguide (CPW) resonators. Plasma assisted molecular beam epitaxy (MBE) is used to grow both superconducting nitrides and wide-bandgap nitride bilayer heterostructures. This combination of nitride materials provides sufficient degrees of freedom that synthesis of an epitaxial Josephson junction may be possible. Here early stages of this approach are evaluated through measurement of the single photon loss of aluminum nitride that is explored as both an overlayer and underlayer of TiN superconducting CPW resonators.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2019
- Bibcode:
- 2019APS..MARV35006R