Electronic and Structural Properties of Defects in Few Layer Molybdenum Disulfide Films
Abstract
Molybdenum disulfide (MoS2) has emerged as an attractive candidate for next-generation 2D electronic devices yet the exact role of defects on its electronic properties is still not well understood. In this study we employ scanning tunneling microscopy and spectroscopy, transmission electron microscopy and kelvin probe force microscopy to obtain quantitative measurements of the local density of states, work function and nature and mobility of these defects. The defects investigated include individual point defects such as sulfur and molybdenum vacancies and extended defects like grain boundaries and film edges.
This work was supported as part of the Center for Complex Materials from First Principles, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Grant No. DE-SC0012575. The electron microscopy facilities at BNL were supported by the Materials Science and Engineering Divisions, Office of Basic Energy Sciences of the U.S. Department of Energy under Contract # DE-SC0012704.- Publication:
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APS March Meeting Abstracts
- Pub Date:
- 2019
- Bibcode:
- 2019APS..MART70236F