THz Spectrum Analysis Using an Antiferromagnetic Tunnel Junction as a Signal Mixer
Abstract
We propose a novel, all-electrical method of performing spectrum analysis between 0.1 THz to 1.0 THz (in the ``THz gap''). The method features an antiferromagnetic (AFM) tunnel junction that consists of 4 thin layers (Pt, AFM, MgO, Pt) and functions as follows. First, an in-plane dc bias current I(t) in the Pt layer creates perpendicular spin Hall current, which excites rotation of the AFM sublattices with a frequency f(t) I(t). When the bias current I(t) increases with time, f(t) can be linearly swept over the THz gap. Due to the tunneling magnetoresistance effect, the resistance R(t) of the MgO/Pt structure oscillates with the same frequency f(t). Oscillating resistance R(t) is mixed with an input signal producing low-frequency output voltage V(t) that temporally encodes the input spectrum. The spectrum can be extracted from V(t) using signal processing method described in.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2019
- Bibcode:
- 2019APS..MARR39005L