Atomic Scale Patterned Arsenic in Silicon
Abstract
Over the past two decades, scanning tunnelling microscopy - hydrogen desorption lithography (STM-HDL) has been developed and utilized to great effect. Atomic scale devices can now be fabricated by positioning phosphorus (P) atoms in a silicon (Si) surface with near atomic precision. Expanding STM-HDL fabrication to include multiple species of dopant impurity atoms could provide new possibilities for device structure and function. Working towards expanding the materials palette of STM lithography, we have examined the compatibility of arsenic (As) with STM-HDL. We have studied AsH3 adsorption on Si(001) and Si(001)-H, and compared this to the well-studied Si(001)-PH3 system (used in 2D patterning of P in Si). We observe a number of subtle, but important differences between these two systems and discuss possible implications for advanced device fabrication strategies. In addition to the adsorption behaviour of the AsH3 molecules on the Si surface, we also discuss the incorporation and encapsulation of patterned 2D As within the Si lattice, and the optimization of electrical transport properties of As delta-layers in Si. Finally, we demonstrate nanoscale device structure patterning in Si using the two unique donor species (P and As) within a single 2D plane.
Funded by the EPSRC.- Publication:
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APS March Meeting Abstracts
- Pub Date:
- 2019
- Bibcode:
- 2019APS..MARP11013S