Synthetic Metal-Semiconductor Junctions of Transition Metal Disulfides
Abstract
Transition metal dichalcogenides (TMDs), a group of 2D materials with diverse electronic properties, are ideal candidates to build atomically thin electronics. Although critical components of an electronic device based on TMDs, such as insulator-semiconductor and semiconductor-semiconductor junctions, have been demonstrated, there is limited experimental realization of TMD-based metal-semiconductor junctions to date. Here, we report a two-step chemical vapor deposition (CVD) strategy that enables the synthesis of high-quality solely TMD-made metal-semiconductor lateral junctions. Remarkably, we discover a novel growth behavior in such lateral TMD heterojunctions: MoS2 was found to nucleate from the vertexes of multilayered VS2 flakes and evolve into monolayer polycrystals, rather than the edge epitaxy observed in other TMD lateral junctions. Furthermore, we demonstrate that lattice coherency across the lateral junction is not a necessity for low-resistance contacts, as our VS2-MoS2 junctions manifest contact resistance as low as 500 ωµm and a Schottky barrier height as small as 30 meV, both among the best values reported to date for contacts to 2D TMDs. This work opens up a new avenue for all-2D-based synthetic electronics.
AFOSR FATE MURI, Grant No. FA9550-15-1-0514.- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2019
- Bibcode:
- 2019APS..MARE13007L