The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers
Abstract
In this work the possibility of thick GaN layers growth by molecular epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN buffer layers was demonstrated for the first time. Morphological and optical properties of the resulting structure are described.
- Publication:
-
State-of Trends of Scientific Research of Artificial and Natural Nanoobjects, STRANN-2018
- Pub Date:
- January 2019
- DOI:
- 10.1063/1.5087683
- Bibcode:
- 2019AIPC.2064d0004R