Fabrication of graphene-like carbon films on 6H-SiC substrates via chlorination-annealing at low temperature
Abstract
Graphene-like carbon films have been fabricated by annealing carbide-derived carbons on 6H-SiC (000 1 ¯ ) at lower temperature in Ar ambience. Those films show a moderate interaction with substrates and an ordered stacking along c-axis and exhibit the same Raman spectra as that of epitaxial graphene on SiC. This carbon film growth process developed here will provide a new approach to obtain graphene epitaxially grown on SiC substrate at lower cost compared with the traditional access.
- Publication:
-
AIP Advances
- Pub Date:
- February 2019
- DOI:
- 10.1063/1.5052520
- Bibcode:
- 2019AIPA....9b5205H