Unipolar resistive switching in sol-gel synthesized strontium titanate thin films
Abstract
We report repeatable and robust unipolar resistive switching (URS) in strontium titanate (SrTiO3 ∼ STO) thin films fabricated on conducting ITO coated glass substrate. The Atomic Force Microscopy (AFM) image of the top surface of the films suggests very smooth surface over a large area. The conduction mechanisms responsible for the resistive switching phenomenon were also thoroughly analyzed by current-voltage and impedance spectroscopy analysis. Frequency-dependent various impedance parameters were analyzed for each resistive states (high resistance state (HRS) and low resistive state (LRS)). The oxygen vacancies may be one of the dominating factors for robust URS phenomenon in the device. The presented Au/STO/ITO memory devices have exhibited long retention characteristics of >104 s and OFF/ON resistance ratio of >103 with a distinguishable SET and RESET voltage window of ∼1 V.
- Publication:
-
Vacuum
- Pub Date:
- May 2018
- DOI:
- 10.1016/j.vacuum.2018.02.016
- Bibcode:
- 2018Vacuu.151..182T