Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1-xAs (x = 0.05-0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001)
Abstract
- Publication:
-
Semiconductors
- Pub Date:
- January 2018
- DOI:
- 10.1134/S1063782618010232
- Bibcode:
- 2018Semic..52..120S