SOI MESFETs on high-resistivity, trap-rich substrates
Abstract
The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.
- Publication:
-
Solid State Electronics
- Pub Date:
- April 2018
- DOI:
- 10.1016/j.sse.2018.02.003
- Bibcode:
- 2018SSEle.142...47M
- Keywords:
-
- Silicon-on-insulator;
- Partially-depleted;
- MESFETs;
- Maximum available gain;
- Spice model