0.16 μm BCD single-photon avalanche diode with 30 ps timing jitter, high detection efficiency and low noise
Abstract
CMOS SPADs are nowadays an established imaging technology for applications requiring single-photon sensitivity in a compact form-factor (e.g. three-dimensional LIDAR imaging and fluorescence lifetime FLIM microscopy). However, we aimed at further enhance overall SPAD performances, by exploiting smart power technologies, such as the BCD (Bipolar-CMOS-DMOS) one. We achieved the present state-of-the-art SPADs fabricated in the 0.16 μm BCD technology by STMicroelectronics, attaining >60% photon detection efficiency at 500 nm, dark count rate density < 0.2 cps/μm2, and less than 30 ps FWHM timing jitter.
- Publication:
-
Advanced Photon Counting Techniques XII
- Pub Date:
- May 2018
- DOI:
- 10.1117/12.2304851
- Bibcode:
- 2018SPIE10659E..0DS