Self-trapping and ordering of heavy holes in the wide band-gap semiconductor β -G a2O3
Abstract
Scanning tunneling microscopy (STM) has been utilized for imaging and manipulation of self-trapped holes on the surface of the wide band-gap semiconductor β -G a2O3 . A positively charged surface layer comprised of localized holes with 1013c m-2 density has been observed for n -doped samples. We show that the surface layer can be populated by hole pumping from the STM tip. A transition between the glassy phase and ordered striped phase of self-trapped holes has also been observed. Our analysis indicates that the saturated two-dimensional density of self-trapped holes may be determined by balance of self-trapping and Coulomb repulsion energies.
- Publication:
-
Physical Review B
- Pub Date:
- December 2018
- DOI:
- 10.1103/PhysRevB.98.241413
- Bibcode:
- 2018PhRvB..98x1413A