The Recessed Trapezoidal Groove Dual-Gate AlGaN/GaN E-Mode Transistor by Using Depletion Enhancement Effect
Abstract
The recessed trapezoidal groove dual-gate profile is achieved by the low power CF4 plasma etching based on the principle of ion-scattering. The recessed trapezoidal groove dual-gate architecture can increase the lateral broadening of depletion width, yielding the Enhancement-mode operation. This device demonstrates a threshold voltage of 0.43 V, a maximum drain current of 480 mA mm−1 and a trans-conductance of 308 mS mm−1. The device exhibits a low off-state leakage current of ≈10−10 A mm−1 and gate induced drain leakage is effectively improved. An extrinsic current gain cut off frequency of 32 GHz and a maximum oscillation frequency of 65 GHz are deduced. The threshold voltage (Vth) stability of the Schottky gate HEMT is investigated. The recessed trapezoidal groove dual-gate exhibits a small shift of Vth, which is attributed to the lateral extension of depletion region in the trapezoidal groove dual-gate structure.
- Publication:
-
Physica Status Solidi Applied Research
- Pub Date:
- May 2018
- DOI:
- 10.1002/pssa.201700550
- Bibcode:
- 2018PSSAR.21500550Y