Comparison of Electrical Properties of Ni/n-GaN Schottky Diodes on c-Plane and m-Plane GaN Substrates
Abstract
The electrical properties of un-doped and lightly Si-doped GaN grown on c- and m-plane GaN substrates by metal organic chemical vapor deposition are investigated. The step-flow growth modes are realized for c- and m-plane GaN epitaxial layer. The carbon contamination in the c-plane GaN and m-plane GaN, grown at 1120 °C and V/III = 1000, are found to be 1.4 × 1016 cm−3 and 5.0 × 1015 cm−3, respectively. The m-plane GaN follows a linear correlation between the carrier concentration and the Si atomic concentration. The Ni/n-GaN (Si; 1 × 1016 cm−3) Schottky vertical diodes on the c- and m-plane GaN substrates reveal that the reverse current-voltage (I-V) curves are fitted by using the thermionic field emission model under the measured carrier concentration and the Schottky barrier height. The leakage current of the m-plane GaN is three orders of magnitude larger than the c-plane GaN, mostly due to the difference in the Schottky barrier height.
- Publication:
-
Physica Status Solidi Applied Research
- Pub Date:
- April 2018
- DOI:
- 10.1002/pssa.201700362
- Bibcode:
- 2018PSSAR.21500362Y