Effects of 10 MeV electron irradiation on the characteristics of gallium-nitride-based pin alpha-particle detectors
Abstract
GaN-based pin alpha-particle detectors grown on sapphire substrates have been subjected to 10 MeV electron irradiation over a cumulative dose range of 0 to 200 kGy. The pre- and post-irradiation detectors have been characterized with current-voltage and capacitance-voltage measurements, charge collection efficiency (CCE), and alpha-particle pulse-height spectroscopy. The results show that the performance of the detectors underwent significant changes due to enhanced carrier-hopping conductivity through defect states and deep-level traps in the space-charge region induced by the 10 MeV electron irradiation. Such detectors can be used for alpha detection with confidence in an environment of background high energy electrons, up to a dose of about 200 kGy, and the response can degrade rapidly if the dose exceeds 200 kGy. In this work, the maximum CCE was achieved in a detectors irradiated with a cumulative dose of 100 kGy.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- September 2018
- DOI:
- 10.1016/j.nima.2018.06.040
- Bibcode:
- 2018NIMPA.902....9Z
- Keywords:
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- High-energy electron;
- GaN;
- Alpha particle;
- Electron irradiation;
- Charge collection efficiency