Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties
Abstract
The Ga-oxide/GaN structures formed by remote oxygen plasma (ROP) exposure at various temperatures (T s) and times have been systematically investigated. X-ray photoelectron spectroscopy clarified the formation of Ga2O3 layers with close-to-stoichiometric composition and a slight N incorporation of ∼6 at. %. Also, we found that a high T s increases the intensity of a signal related to the N-O bond, which is located near the Ga-oxide/GaN interfaces. Total photoelectron yield spectroscopy (PYS) also revealed that the ROP exposure at T s of 300 °C produces fewer filled defect states in the bandgap of GaN than at 500 °C. This difference in the filled defect states could be attributable to the amount of N-O bonds at the interface.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- June 2018
- DOI:
- 10.7567/JJAP.57.06JE01
- Bibcode:
- 2018JaJAP..57fJE01Y