Low damage patterning of In0.53Ga0.47As film for its integration as n-channel in a fin metal oxide semiconductor field effect transistor architecture
Abstract
- Publication:
-
Journal of Vacuum Science Technology A: Vacuum Surfaces and Films
- Pub Date:
- November 2018
- DOI:
- 10.1116/1.5051505
- Bibcode:
- 2018JVSTA..36f1305B