Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(0 0 1) heterostructures
Abstract
Edge dislocations in face-centered crystals are formed from two mixed dislocations gliding along intersecting {1-11} planes, forming the so-called Lomer locks. This process, which is called zipping, is energetically beneficial. It is experimentally demonstrated in this paper that a reverse process may occur in Ge/GeSi strained buffer/Si(0 0 1) heterostructures under certain conditions, namely, decoupling of two 60° dislocations that formed the Lomer-type dislocation, i.e., unzipping. It is assumed that the driving force responsible for separation of Lomer dislocations into two 60° dislocations is the strain remaining in the GeSi buffer layer.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- February 2018
- DOI:
- 10.1016/j.jcrysgro.2017.12.017
- Bibcode:
- 2018JCrGr.483..265B
- Keywords:
-
- A1. Atomic scale microscopy;
- A1. Line defects;
- A1. Lomer dislocation;
- A1. Movable edge dislocation complex;
- A2. Molecular beam epitaxy;
- B1. Ge-on-Si