Influence of the atom source operating parameters on the structural and optical properties of In xGa 1 - xN nanowires grown by plasma-assisted molecular beam epitaxy
Abstract
The influence of the atom source operating parameters on the structural and optical properties of In xGa 1 - xN/GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy is investigated. Electron microscopy and photoluminescence spectroscopy reveal a change of the NW tip morphology and an enhancement of the local indium incorporation with increasing nitrogen flux. Tuning the density ratio of atomic-to-excited molecular nitrogen to lower values minimizes the point defect density, which results in a decrease of the non-radiative recombination rate as demonstrated by a combination of continuous wave and time-resolved photoluminescence spectroscopy.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- October 2018
- DOI:
- 10.1063/1.5050391
- Bibcode:
- 2018JAP...124p5703H