Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect
Abstract
- Publication:
-
IEEE Transactions on Nanotechnology
- Pub Date:
- May 2018
- DOI:
- 10.1109/TNANO.2018.2815721
- Bibcode:
- 2018ITNan..17..492L