Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 2018
- DOI:
- 10.1109/TED.2018.2866123
- Bibcode:
- 2018ITED...65.4679P