High-Capacitance-Density {p} -GaN Gate Capacitors for High-Frequency Power Integration Tang, Gaofei ; Kwan, M. -H. ; Su, R. -Y. ; Yao, F. -W. ; Lin, Y. -M. ; Yu, J. -L. ; Yang, Thomas ; Chern, Chan-Hong ; Tsai, Tom ; Tuan, H. C. ; Kalnitsky, Alexander ; Chen, Kevin J. Abstract Publication: IEEE Electron Device Letters Pub Date: September 2018 DOI: 10.1109/LED.2018.2854407 Bibcode: 2018IEDL...39.1362T