Vertically Stacked Strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD Epitaxial Growth and the Optimum Selective Channel Release Process
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 2018
- DOI:
- 10.1109/LED.2018.2852775
- Bibcode:
- 2018IEDL...39.1274H