AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4-7-V Threshold Voltage and 1.3-kV Breakdown Voltage
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- July 2018
- DOI:
- 10.1109/LED.2018.2838542
- Bibcode:
- 2018IEDL...39.1026Z