Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device Shi, Kaixi ; Wang, Zhongqiang ; Xu, Haiyang ; Xu, Zhe ; Zhang, Xiaohan ; Zhao, Xiaoning ; Liu, Weizhen ; Yang, Guochun ; Liu, Yichun Abstract Publication: IEEE Electron Device Letters Pub Date: April 2018 DOI: 10.1109/LED.2018.2806377 Bibcode: 2018IEDL...39..488S