Simulation Study of a Novel Snapback-Free and Low Turn-Off Loss Reverse-Conducting IGBT With Controllable Trench Gate
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- February 2018
- DOI:
- 10.1109/LED.2017.2780081
- Bibcode:
- 2018IEDL...39..252W