Impact of embedded voids on thin-films with high thermal expansion coefficients mismatch
Abstract
Using technology to reduce defects at heterogeneous interfaces of thin-films is at a high-priority for modern semiconductors. The current work utilizes a three-dimensional multiple-slip crystal-plasticity model and specialized finite-element formulations to study the impact of the embedded void approach (EVA) to reduce defects in thin-films deposited on a substrate with a highly mismatched thermal expansion coefficient, in particular, the growth of an InGaN thin-film on a Si substrate, where EVA has shown a remarkable reduction in stresses on the side of the embedded voids.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2018
- DOI:
- 10.1063/1.5011394
- Bibcode:
- 2018ApPhL.112d2109K