Demonstration of Integrated SIS/SFS Memory Unit Cell
Abstract
Through the assembly of a hybrid ferromagnetic (F)/superconducting (S) system, it is possible to create novel technologies that can be utilized in the cryogenic computing world. When assembling Josephson junctions that use a magnetic pseudo-spin valve as the coupling layer, one can exploit the phase characteristics of the junction to act as a persistent non-volatile memory bit. This arises as a result of the relative orientation of the magnetizations of the two F layers, either parallel or antiparallel, yielding an equilibrium phase of 0 or π across the junction. This binary behavior can be read out by a SQUID based on traditional insulating (I) Josephson junctions, and is ideal for classical computing technologies based on superconducting materials. In order to realize such an application, SIS Josephson junctions must be integrated in a single fabrication process with SFS pseudo-spin valve junctions. We present here an unambiguous demonstration of a working integrated SIS/SFS memory device based on these concepts.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2018
- Bibcode:
- 2018APS..MARX30011G