The Influence of N2gas at wafer-less dry cleaning process in mass production system
Abstract
Wafer-Less Dry Cleaning(WLDC) is a process that maintain chamber surface stability as well as other contaminates after etch process are carried out in the chamber. It is important to maintain constant inner circumstance for product quality in mass production system. WLDC has popularly used fluorocarbon and O2 gas to eliminate byproducts. Recently coating materials of etch chamber normally use Y2O3\ and Al2O3. But continuous fluorination of coating surface by fluorocarbon and O2 gas influence plasma elements and stability. Although O2 gas is good at chamber cleaning, it has caused side effect. Experimentally O2 addition in fluorocarbon gas base accelerates poly and oxide etch rate. It means chamber wall surface rapidly can be transformed. The focus of our study is on effect of process gas at WLDC for long lasting and constant plasma status. Through gas composition experiments, we have focused on researching role of N2\ gas for replacing O2\ gas and reducing side effects despite of long term use.
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- 2018
- Bibcode:
- 2018APS..GECLW1053C