Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10\bar{1}0) m-plane GaN substrates
Abstract
We report nonpolar vertical GaN-on-GaN p-n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ·cm2, and high on/off ratio of 1010. The reverse current leakage was described by a trap-assisted space-charge-limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. These results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.
- Publication:
-
Applied Physics Express
- Pub Date:
- November 2018
- DOI:
- 10.7567/APEX.11.111003
- Bibcode:
- 2018APExp..11k1003F