Thermal oxidation and nitridation of Si nanowalls prepared by metal assisted chemical etching
Abstract
Silicon nanowalls with controlled orientation have been prepared using metal assisted chemical etching process. Thermal oxidation and nitridation processes have been carried out on the prepared silicon nanowalls under a control flow of oxygen/nitrogen gases independently at 1050°C for 900s. The morphology and structural properties of the as-prepared, oxidized and nitridated silicon nanowalls have been studied using the scanning electron microscopy and the Grazing incident X-ray diffraction techniques. The results obtained from the analysis of X-ray diffraction patterns and the microscopy images are discussed.
- Publication:
-
Dae Solid State Physics Symposium 2017
- Pub Date:
- April 2018
- DOI:
- 10.1063/1.5028693
- Bibcode:
- 2018AIPC.1942e0062B