Two-Dimensional h-BN and MoS2 as Diffusion Barriers for Ultra-Scaled Copper Interconnects
Abstract
Copper interconnects in modern integrated circuits require ultra-thin barriers to prevent intermixing of Cu with surrounding dielectric materials. Conventional barriers rely on metals like TaN, however their finite thickness reduces the cross-sectional area and significantly increases the resistivity of nanoscale interconnects. In this study, a new class of two-dimensional (2D) Cu diffusion barriers, hexagonal boron nitride (h-BN) and molybdenum disulfide (MoS2), is demonstrated for the first time. Using time-dependent dielectric breakdown measurements and scanning transmission electron microscopy coupled with energy dispersive X-ray spectroscopy and electron energy loss spectroscopy, these 2D materials are shown to be promising barrier solutions for ultra-scaled interconnect technology. The predicted lifetime of devices with directly deposited 2D barriers can achieve three orders of magnitude improvement compared to control devices without barriers.
- Publication:
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arXiv e-prints
- Pub Date:
- June 2017
- DOI:
- 10.48550/arXiv.1706.10178
- arXiv:
- arXiv:1706.10178
- Bibcode:
- 2017arXiv170610178L
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 18 pages