Origin of the turn-on phenomenon in Td-MoT e2
Abstract
We did the resistivity and scanning tunneling microscope/spectroscopy (STM/STS) experiments at different temperatures and magnetic fields to investigate the origin of the turn-on (t-o) phenomenon of Td-MoT e2 . There are two interesting observations. Firstly, magnetoresistance (MR) follows the Kohler's rule scaling: MR ∼(H/ρ0 ) m with m ≈1.92 and the t-o temperature T* under different magnetic fields can also be scaled by T*∼(H-Hc) υ with υ =1 /2 . Secondly, a combination of compensated electron-hole pockets and a possible electronic structure phase transition induced by the temperature have been validated in Td-MoT e2 by the STM/STS experiments. Compared with the STS of Td-MoT e2 single crystal under H =0 , the STS hardly changes even when the applied field is up to 7 T. The origins of the t-o phenomenon in Td-MoT e2 are discussed. Meanwhile, we analyzed the universality and applicability of the t-o phenomenon in the extreme MR materials with almost balanced hole and electron densities as well as with other systems where the density of hole or electron is in a dominant position.
- Publication:
-
Physical Review B
- Pub Date:
- August 2017
- DOI:
- 10.1103/PhysRevB.96.075132
- arXiv:
- arXiv:1707.02570
- Bibcode:
- 2017PhRvB..96g5132P
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- Attepted by Phys. Rev. B