Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2 O3 Stack Gate
Abstract
- Publication:
-
Physica Status Solidi Applied Research
- Pub Date:
- November 2017
- DOI:
- 10.1002/pssa.201700463
- Bibcode:
- 2017PSSAR.21400463B