Quantitative strain analysis of InAs/GaAs quantum dot materials
Abstract
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nm into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD.
- Publication:
-
Scientific Reports
- Pub Date:
- March 2017
- DOI:
- 10.1038/srep45376
- arXiv:
- arXiv:1611.08911
- Bibcode:
- 2017NatSR...745376V
- Keywords:
-
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 11 pages, 3 figures