Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer
Abstract
This study investigated electron beam laser excitation in the UV region using a GaN/AlGaN multiquantum well (MQW) active layer. Laser emission was observed when the GaN/AlGaN MQW was excited by an electron beam, with a wavelength of approximately 353 nm and a threshold power density of 230 kW/cm2. A comparison of optical pumping and electron beam pumping demonstrated that the rate of generation of electron-hole pairs when using electron beam excitation was approximately one quarter that of light excitation.
- Publication:
-
Scientific Reports
- Pub Date:
- June 2017
- DOI:
- 10.1038/s41598-017-03151-8
- Bibcode:
- 2017NatSR...7.2944H