Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template
Abstract
- Publication:
-
Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
- Pub Date:
- November 2017
- DOI:
- 10.1116/1.4999468
- Bibcode:
- 2017JVSTB..35f2902K