Design and technology optimization of SiC-based RF MEMS switch
Abstract
This paper presents design and technology optimization of RF MEMS switch based on the silicon carbide film. The universal optimization criterion for electromechanical parameters was calculated. The experimental results of determination of the technological critical factors are discussed. Recommendations for the subsequent technology improvement are presented.
- Publication:
-
Journal of Physics Conference Series
- Pub Date:
- November 2017
- DOI:
- 10.1088/1742-6596/917/8/082007
- Bibcode:
- 2017JPhCS.917h2007L