Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm
Abstract
We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.
- Publication:
-
Journal of Physics Conference Series
- Pub Date:
- November 2017
- DOI:
- 10.1088/1742-6596/917/5/052021
- Bibcode:
- 2017JPhCS.917e2021K