Investigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures
Abstract
Investigation of the thermal annealing effect on Schottky barrier parameters and the leakage current of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures has been performed. Improvement of Schottky barrier parameters after annealing of the investigated metallization schemes was observed. Ni/Au and Mo/Au contacts drastically degrade after annealing at the temperatures higher than 400 °C, whereas the Ni/Mo/Au contact exhibits excellent parameters after 500 °C annealing (qϕb = 1.00 eV, n = 1.13 и Ileak = 5 μA).
- Publication:
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Journal of Physics Conference Series
- Pub Date:
- March 2017
- DOI:
- 10.1088/1742-6596/816/1/012039
- Bibcode:
- 2017JPhCS.816a2039S