GaN nanorod arrays as a high-stability field emitter
Abstract
Patterned arrays of epitaxial GaN (0001) nanorods by Si-ion bombardment of Si (111) substrates have been fabricated for the field emitters. The field emission characteristics of the GaN nanorod arrays were measured; both GaN nanorods on self-implanted and GaN matrix on unimplanted Si substrates. The current densities as high as 10 mA/cm2 have been observed for GaN nanorod arrays under applied electrical field of about 70 V/μm, while the stability of field emission at 3.93 mA/cm2 has been tested up to 7 hours with the standard deviation of 0.2%.
- Publication:
-
Journal of Korean Physical Society
- Pub Date:
- September 2017
- DOI:
- 10.3938/jkps.71.340
- Bibcode:
- 2017JKPS...71..340S
- Keywords:
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- GaN;
- Nanorod;
- Implantation;
- Field emission;
- Stability