Solution-processed indium-zinc-oxide thin-film transistors from a fast and stable pre-annealing process with a femtosecond laser
Abstract
A pre-annealing manufacturing process is applied to enhance the electrical characteristics of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). We show here a fast and stable pre-annealing process using a femtosecond laser to maintain electrical stability and improve electrical performance. Furthermore, the femtosecond-laser pre-annealing process is a fast preparation method that has greater flexibility and development space for semiconductor production activity. Pre-annealed IZO TFTs show a field-effect mobility of 3.75 cm2/Vs, an on-current/off-current ( I on / I off ) ratio greater than 105, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Moreover, the femtosecond laser pre-annealing, which provides better electrical stability in the solution-processed IZO TFTs, is discussed.
- Publication:
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Journal of Korean Physical Society
- Pub Date:
- May 2017
- DOI:
- 10.3938/jkps.70.872
- Bibcode:
- 2017JKPS...70..872S
- Keywords:
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- IZO thin-film transistor;
- Femtosecond laser;
- Solution-processed;
- Pre-annealing